Crystal Growth Furnace for Silicon Components

It can melt the silicon materials via the graphite resistance heater in an inert atmosphere, and then grow dislocation-free monocrystal silicon ingot (used for silicon components) though CZ method automatically. It is suitable for 24’’ ingot and compatible with superconducting magnetic field.

Diameter of pull chamber

650mm
Capable of growing ultra-large ingot

26'

Large size, high quality

High precision control system
Sophisticated monitoring and feedback system & Optional magnetic field & Capable of growing 26' ultra-large ingot used for silicon components

High precision control

The precision control and long-term stable operation of the equipment can be assured with the features of complete magnetic field control system, brand-new software control system, vision system and ultra-high-precision transmission system.
Large size

Support all the mainstream ingot sizes on the market, with the largest size up to 26'.
Customizable

Offer customized products by developing solutions on hot zone structure, magnetic field configuration and others to serve the various needs of customers.

Crystal Growth Furnace for Silicon Components

650mm

26'